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Ion Implantation - Emanuele Rimini
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Ion Implantation - nuovo libro

1995, ISBN: 0792395204

Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As … Altro …

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Ion Implantation: Basics to Device Fabrication / Emanuele Rimini / Buch / The Springer International Series in Engineering and Computer Science / HC runder Rücken kaschiert / XIII / Englisch / 1994 - Rimini, Emanuele
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Ion Implantation: Basics to Device Fabrication / Emanuele Rimini / Buch / The Springer International Series in Engineering and Computer Science / HC runder Rücken kaschiert / XIII / Englisch / 1994 - copertina rigida, flessible

1994, ISBN: 9780792395201

[ED: Gebunden], [PU: Springer US], Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the… Altro …

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Rimini, Emanuele:
Ion Implantation: Basics to Device Fabrication - copertina rigida, flessible

1994

ISBN: 9780792395201

Hard cover, New., Sewn binding. Cloth over boards. 393 p. Contains: Unspecified. The Springer International Engineering and Computer Science, 293., New York, NY, [PU: Springer]

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Ion Implantation : Basics to Device Fabrication - Rimini, E.; Rimini, Emanuele (physics Department, University Of Catania, Italy); Rimini, Emanuele
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Rimini, E.; Rimini, Emanuele (physics Department, University Of Catania, Italy); Rimini, Emanuele:
Ion Implantation : Basics to Device Fabrication - copertina rigida, flessible

1994, ISBN: 0792395204

[EAN: 9780792395201], Nouveau livre, [SC: 14.15], [PU: Springer], Books

NEW BOOK. Costi di spedizione: EUR 14.15 GreatBookPrices, Columbia, MD, U.S.A. [5352716] [Note: 4 (sur 5)]
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Rimini, Emanuele:
Ion Implantation: Basics to Device Fabrication (the Springer International Series in Engineering and Computer Science) - copertina rigida, flessible

1994, ISBN: 9780792395201

Hardcover, Nouveau livre, As new., [PU: Springer]

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Ion Implantation: Basics to Device Fabrication
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ISBN:

9780792395201


Ion Implantation: Basics to Device Fabrication is a collection of research dealing with several aspects of ion implantation, including basic information on the physics of devices, ion implanters, channeling implants, yield, damage and its annealing, in addition to a host of other topics. Particular attention has been paid to those techniques that provide two-dimensional profiles of damage and of dopants, a careful treatment of silicon based devices, threshold voltage control, shallow junctions, minority carrier lifetime control by metallic ion implants, and high energy implants is given in this work. This book, based on a course preceding the biannual Ion Implantation Technology Conference, is a valuable reference for physicists, chemists, materials scientists, processing, device production, device design, and ion beam engineers interested in any aspect of ion implantation, as well as a secondary text for a graduate course on the subject.

Informazioni dettagliate del libro - Ion Implantation: Basics to Device Fabrication


EAN (ISBN-13): 9780792395201
ISBN (ISBN-10): 0792395204
Copertina rigida
Copertina flessibile
Anno di pubblicazione: 1994
Editore: Springer
410 Pagine
Peso: 0,771 kg
Lingua: eng/Englisch

Libro nella banca dati dal 2008-03-18T15:06:10+01:00 (Rome)
Pagina di dettaglio ultima modifica in 2024-01-31T15:30:44+01:00 (Rome)
ISBN/EAN: 9780792395201

ISBN - Stili di scrittura alternativi:
0-7923-9520-4, 978-0-7923-9520-1
Stili di scrittura alternativi e concetti di ricerca simili:
Autore del libro : rimini, emanuele
Titolo del libro: ion, basics, rimini, computer science

Dati dell'editore

Autore: Emanuele Rimini
Titolo: The Springer International Series in Engineering and Computer Science; Ion Implantation: Basics to Device Fabrication
Editore: Springer; Springer US
393 Pagine
Anno di pubblicazione: 1994-12-31
New York; NY; US
Lingua: Inglese
235,39 € (DE)
241,99 € (AT)
260,00 CHF (CH)
Available
XIII, 393 p.

BB; Hardcover, Softcover / Technik/Maschinenbau, Fertigungstechnik; Werkstoffprüfung; Verstehen; basic research; ion; material; radiation; semiconductor; silicon; Characterization and Analytical Technique; Inorganic Chemistry; Nuclear Physics; Anorganische Chemie; Atom- und Molekularphysik; EA; BC

1 Semiconductor Devices.- 1.1 Introduction.- 1.2 Semiconductor Physics.- 1.3 p-n Junction and Diode.- 1.4 Unipolar and Bipolar Transistors.- 1.5 Ion Implantation and Semiconductor Devices.- 1.6 Damage and Yield.- 1.7 Future Trend.- 2 Ion Implanters.- 2.1 Introduction.- 2.2 Ion Sources.- 2.3 High Energy Implanters.- 2.4 Magnetic Analyzer and Beam Transport.- 2.5 Energy Contamination.- 2.6 Scan System and Current Measurement.- 2.7 Wafer Cooling.- 2.8 Wafer Charging.- 2.9 Uniformity Control and Mapping.- 2.10 Contaminants and Yield.- 2.11 Plasma Immersion Ion Implantation.- 3 Range Distribution.- 3.1 Introduction.- 3.2 Elastic Stopping Power.- 3.3 Electronic Energy Loss.- 3.4 Depth Profile of Implanted Ions.- 3.5 Penetration Anomalies.- 3.6 Channeling Implants.- 3.7 Lateral Spreading.- 3.8 Simulation of Range Distribution.- 4 Radiation Damage.- 4.1 Introduction.- 4.2 Collision Cascade.- 4.3 Damage Distribution.- 4.4 Crystalline Defects.- 4.5 Primary Defects.- 4.6 Hot Implants.- 4.7 Ion Beam Induced Enhanced Crystallization.- 4.8 Ion Implantation into Localized Si Areas.- 5 Annealing and Secondary Defects.- 5.1 Introduction.- 5.2 Solid Phase Epitaxial Growth of Amorphous Silicon.- 5.3 Annealing of Low-Dose Heavy - Ion Implant.- 5.4 Regrowth of Amorphous Layer Under a Mask.- 5.5 Annealing of Heavily Disordered Regions.- 5.6 Rapid Thermal Processing.- 5.7 Impurity Diffusion During Annealing.- 5.8 Interaction of Impurities with Ion Implanted Defects.- 5.9 Defect Engineering.- 6 Analytical Techniques.- 6.1 Introduction.- 6.2 Secondary Ion Mass Spectrometry.- 6.3 Spreading Resistance Profilometry: One and Two Dimensional Analyses.- 6.4 Carrier and Mobility Profiles.- 6.5 Rutherford Backscattering and Channeling Effect.- 6.6 Transmission Electron Microscopy.- 7 Silicon Based Devices.- 7.1 Introduction.- 7.2 Threshold Voltage Control in MOSFET.- 7.3 Short Channel Effects.- 7.4 Shallow Junctions.- 7.5 Complementary MOS Devices and Technology.- 7.6 Lifetime Engineering in Power Devices.- 7.7 High Energy Implant Applications.- 7.8 High-Speed Bipolar Transistors.- 8 Ion Implantation in Compound Semi-Conductor and Buried Layer Synthesis.- 8.1 Introduction.- 8.2 Ion Implantation in GaAs.- 8.3 Ion Implantation in InP.- 8.4 Isolation of III-V Semiconductors.- 8.5 Isolation of Superlattice and Quantum Well Structures.- 8.6 Synthesis of Buried Dielectric.- 8.7 Devices in SOI Substrates.- 8.8 Buried Metal Layer Formation.- 8.9 Compound Semiconductor Based Devices.- Selected References.- References.

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